Modeling of light-sensitive resonant-tunneling-diode devices

We present a method to include the effects of light excitation on two different models of resonant-tunneling-diode-based devices. Our approach takes into account both photoconductive and charge accumulation effects responsible for shifting the static I – V curve when the structure is under light excitation. Computational simulations led to good agreement between the model and experimental results. © 2004 American Institute of Physics. @DOI: 10.1063/1.1728290#